Beijing, Sept. 5 -- SiEn QingDao Integrated Circuits has submitted a patent application for Compensation Structure, Semiconductor Structure and Preparation Method Thereof. This invention was developed by Zhu Meiyan, Li Peichao, Song Sinan and Wang Jing. The patent application number is CN202311216104 20230920. The patent public..

Beijing, Sept. 5 -- SiEn QingDao Integrated Circuits has filed a patent application for Semiconductor Structure and Manufacturing Method Thereof. This invention was developed by Zhang Lei. The patent application number is CN202410164434 20240205. The patent publication number is CN119384030 (A). International Patent Classific..

Beijing, Sept. 5 -- SiEn QingDao Integrated Circuits has submitted a patent application for Manufacturing Method of Semiconductor Structure. This invention was developed by Lyu Jiqing. The patent application number is CN202311354624 20231018. The patent publication number is CN119384029 (A). International Patent Classification ..

Beijing, Sept. 5 -- SiEn QingDao Integrated Circuits has applied Chinese patent for Power Semiconductor Device and Manufacturing Method Thereof. Hu Zhenshi and Zhang Linying developed it. The patent application number is CN202410158004 20240204. The patent publication number is CN119384027 (A). International Patent Classificati..

Beijing, Sept. 5 -- SiEn QingDao Integrated Circuits has applied Chinese patent for LDMOS Device and Preparation Method Thereof. Wang Fang, Liu Wusong and Zhang Shuai developed it. The patent application number is CN202311354666 20231018. The patent publication number is CN119384026 (A). International Patent Classification co..

Beijing, Sept. 5 -- SiEn QingDao Integrated Circuits has filed a patent application for Vertical Conductive Semiconductor Device Based on Trench Gate Type and Preparation Method Thereof. This invention was developed by Liu Mengting. The patent application number is CN202311467281 20231107. The patent publication number is CN119..

Beijing, Sept. 5 -- State Intellectual Property Office of China has received SiEn QingDao Integrated Circuits patent application for Semiconductor Device and Manufacturing Method Thereof. Zhang Wenya and Liu Wusong developed the invention. The patent application number is CN202411265970 20240910. The patent publication number..

Beijing, Sept. 5 -- SiEn QingDao Integrated Circuits has filed a patent application for LDMOS Device and Preparation Method Thereof. This invention was developed by Qin Zhenshan and Liu Wusong. The patent application number is CN202410366590 20240328. The patent publication number is CN119383996 (A). International Patent Clas..

Beijing, Sept. 5 -- SiEn QingDao Integrated Circuits has submitted a patent application for LDMOS Device and Preparation Method Thereof. This invention was developed by Zhang Lei and Liu Wusong. The patent application number is CN202410357641 20240327. The patent publication number is CN119383995 (A). International Patent Cla..

Beijing, Sept. 5 -- SiEn QingDao Integrated Circuits has filed a patent application for LDMOS Device and Preparation Method Thereof. This invention was developed by Wang Fang and Liu Wusong. The patent application number is CN202410128151 20240130. The patent publication number is CN119383994 (A). International Patent Classif..

Beijing, Sept. 5 -- SiEn QingDao Integrated Circuits has sought patent for LDMOS Device and Preparation Method Thereof. This invention was developed by Qin Zhenshan and Liu Wusong. The patent application number is CN20241075318 20240118. The patent publication number is CN119383993 (A). International Patent Classification cod..

Beijing, Sept. 1 -- SiEn QingDao Integrated Circuits has filed a patent application for Intermetallic Dielectric Layer Structure and Preparation Method Thereof. This invention was developed by Wang Fang. The patent application number is CN202311140846 20230905. The patent publication number is CN119361570 (A). International P..

Beijing, Sept. 1 -- SiEn QingDao Integrated Circuits has submitted a patent application for Method for Obtaining Key Size of Photoetching Pattern. This invention was developed by Yan Zhen, Jiang Feng, Cui Peng and Sun Fuguang. The patent application number is CN202411480654 20241022. The patent publication number is CN1193614..

Beijing, Sept. 1 -- SiEn QingDao Integrated Circuits has applied Chinese patent for System and Method for Detecting Slippage Defect in Epitaxial Layer. Wang Tong, Wang Jie, Yan Gengxin and Cao Min developed it. The patent application number is CN202311566291 20231122. The patent publication number is CN119361448 (A). Internat..

Beijing, Sept. 1 -- State Intellectual Property Office of China has received SiEn QingDao Integrated Circuits patent application for Forming Method of Aluminum Laminated Structure and LCOS (liquid Crystal on Silicon) Device. Qiu Lichun and Jiang Yingjie developed the invention. The patent application number is CN202411345325 ..

Beijing, Sept. 1 -- SiEn QingDao Integrated Circuits has submitted a patent application for Device Test Structure and Test Method. This invention was developed by Zhang Min, Yan Gengxin and Ma Yingjie. The patent application number is CN202411311650 20240919. The patent publication number is CN119361576 (A). International Pat..

Beijing, Sept. 1 -- SiEn QingDao Integrated Circuits has submitted a patent application for Method for Monitoring Film Tearing Process and Film Tearing Equipment. Wang Guoan, Guan Guanghui and Zhao Ziqiang developed the invention. The patent application number is CN202311566293 20231122. The patent publication number is CN119..

Beijing, Sept. 1 -- SiEn QingDao Integrated Circuits has sought patent for Monitoring Structure, Monitoring Method and Semiconductor Device Capacitance Testing Method. This invention was developed by Qiu Haibin, Zhu Xiaowen and Wang Wenbo. The patent application number is CN202410469531 20240418. The patent publication number i..

Beijing, Sept. 1 -- SiEn QingDao Integrated Circuits has submitted a patent application for Semiconductor Structure and Preparation Method Thereof, and Method for Measuring Etched Rate of Semiconductor. This invention was developed by Li Ningning, Liu Jialei and Ma Tiantian. The patent application number is CN202410261347 20240..

Beijing, Sept. 1 -- SiEn QingDao Integrated Circuits has submitted a patent application for Metal Wiring, Manufacturing Method Thereof and Integrated Circuit. This invention was developed by Yin Xiaoming and Liu Qi. The patent application number is CN202311217037 20230920. The patent publication number is CN119361531 (A). Inter..

Beijing, Sept. 1 -- SiEn QingDao Integrated Circuits has submitted a patent application for Substrate, Film Pasting Method Thereof and Method for Executing Chemical Plating. This invention was developed by Yang Weixia, Wang Haohao and Li Huangxin. The patent application number is CN202410800106 20240619. The patent publicatio..

Beijing, Sept. 1 -- SiEn QingDao Integrated Circuits has applied Chinese patent for Substrate, Film Pasting Method Thereof and Method for Executing Chemical Plating. Xu Jie, Li Huangxin and Yang Weixia developed it. The patent application number is CN202410797830 20240619. The patent publication number is CN119361508 (A). Int..

Beijing, Sept. 1 -- SiEn QingDao Integrated Circuits has submitted a patent application for Substrate Thinning Method. This invention was developed by Yang Weixia, Li Huangxin and Li Qiang. The patent application number is CN202410542910 20240430. The patent publication number is CN119361507 (A). International Patent Classifica..

Beijing, Sept. 1 -- State Intellectual Property Office of China has received SiEn QingDao Integrated Circuits patent application for Substrate Thinning Method. Li Huangxin, Yang Weixia and Li Qiang developed the invention. The patent application number is CN202410539316 20240430. The patent publication number is CN119361506 (A)..

Beijing, Sept. 1 -- State Intellectual Property Office of China has received SiEn QingDao Integrated Circuits patent application for Semiconductor Substrate, Film Pasting Method Thereof and Chemical Plating Execution Method. Bai Chen, Li Qiang, Li Huangxin and Yang Weixia developed the invention. The patent application number..

Beijing, Sept. 1 -- SiEn QingDao Integrated Circuits has applied Chinese patent for Manufacturing Method of Semiconductor Device. Niu Feng developed it. The patent application number is CN202310855001 20230712. The patent publication number is CN119361422 (A). International Patent Classification codes are H01L21/28, H10D64/00 a..

Beijing, Sept. 1 -- State Intellectual Property Office of China has released SiEn QingDao Integrated Circuits patent application for Efuse Programming Unit and Programming Method Thereof, Efuse Programming Unit Array and Chip. This invention was developed by Xu Lu and Liu Tao. The patent application number is CN202411423716 202..

Beijing, Sept. 1 -- State Intellectual Property Office of China has published SiEn QingDao Integrated Circuits patent application for Screening Method and Screening System for Detection Marks and Detection Method. The invention was developed by Wang Tong, Wang Jie and Ding Tuo. The patent application number is CN202311511935 20..

Beijing, Sept. 1 -- SiEn QingDao Integrated Circuits has sought patent for Amorphous Rate Detection Method and Ion Implantation Temperature Monitoring Method. This invention was developed by Liu Ying, Jia Yujie and Dai Yuwei. The patent application number is CN202411277805 20240912. The patent publication number is CN119361470 ..

Beijing, Sept. 1 -- State Intellectual Property Office of China has published SiEn QingDao Integrated Circuits patent application for Critical Dimension Measuring Method and Electron Beam Equipment. The invention was developed by Wang Tong and Wang Jie. The patent application number is CN202311525812 20231115. The patent public..

Beijing, Sept. 1 -- State Intellectual Property Office of China has published SiEn QingDao Integrated Circuits patent application for Image Out-of-focus Detection Method, Image Out-of-focus Detection System and Critical Dimension Measurement Method. The invention was developed by Wang Jie. The patent application number is CN202..