Semiconductor
| Thu 18 Dec 2025
Beijing, Dec. 18 -- Beijing Institute of Smart Energy has filed a patent application for Preparation Method of Silicon Carbide Device and Power Device. This invention was developed by Ge Huan, Zhang Bingke, Zhu Tao, Chang Shucheng, Sun Junmin, He Yingfeng, Li Xuhan, Liu Decai, Wei Xiaoguang, Jin Rui and Yang Fei.
The patent a..