Electrical
| Mon 24 Nov 2025
Beijing, Nov. 24 -- Jiangsu Guangshi Electrical Co Ltd has sought patent for Parallel SiC MOSFET Dynamic Current Sharing Time Domain Mathematical Model. This invention was developed by Hu Haitao, Yuan Pengsheng, Li Ning, Wang Ting, Liu Ye, Liu Lei, Lin Huan, Xue Xiaocao, Zhang Huan, Zhang Jin, Zhang Yang, Qiao Zhenjiang, Liu Con..