Semiconductor
| Thu 04 Jun 2026
Geneva, June 5 -- Sicc Shanghai Semiconductor Mat Co Ltd has submitted a patent application for SiC Crystal and SiC Substrate Having Low Defect Stress. This invention was developed by Ma Jianli, Wang Zhenxing, Jia Xiuzhe, Li Peida, Gao Chao, Zhang Jiuyang, Shi Zhiqiang and Li Hao.
The patent application number is WO2025CN1305..