Semiconductor
| Fri 10 Jul 2026
Seoul, July 11 -- Electronics & Telecommunications Research Institute has filed a patent application for Method for Forming Gate Electrode of Semiconductor Device. This invention was developed by Byoung Gue Min, Woojin Chang, Dong Min Kang, Yoo Jin Jang, Junhyung Jeong, Jong Yul Park, E San Jang, Hong Gu Ji, Jeonggil Kim, Kyu Ju..