Semiconductor
| Sat 07 Mar 2026
Beijing, March 7 -- Anhui University has filed a patent application for SRAM (static Random Access Memory) Array Circuit Supporting Double-row Reading and XOR Operation and Memory. This invention was developed by Lin Zhiting, Huo Da, Liu Yu, Hu Wei, Dai Chenghu, Zhao Qiang, Lu Wenjuan, Wu Xiulong, Peng Chunyu, Zhou Yongliang, Li..