Semiconductor
| Tue 13 Jan 2026
Geneva, Jan. 14 -- Applied Materials has sought patent for Gap Fill Methods in High Aspect Ratio Features. This invention was developed by Yeong Sai Hooi, Ji Xiang, Mcgill Lisa, Jha Praket P, Liang Jingmei, Colombeau Benjamin, Pranatharthiharan Balasubramanian and Makala Raghuveer Satya.
The patent application number is WO2025U..