Semiconductor
| Sat 06 Dec 2025
Alexandria, Dec. 6 -- United States Patent for Metal Hybrid Charge Storage Structure for Memory has been issued to Intel NDTM US. This invention was developed by Huang Guangyu, Basu Dipanjan, Kuo Meng-wei, Koval Randy, Mebrahtu Henok, Wang Minsheng, Li Jie, Wang Fei, Gao Qun, Zhang Xingui and Li Guanjie.
The patent applicatio..