Semiconductor
| Wed 15 Apr 2026
Beijing, April 16 -- Institute of Microelectronics, CAS has been granted a patent for Non-volatile Static Random Access Memory Circuit. This invention was developed by Wang Lingfei, Liu Yaxin, Li Xufan, Zhang Shuaidi, Zhang Chunyu, Gu Chen, Shang Kexin, Duan Shengchao, Geng Di and Li Ling.
The patent application number is CN2..