Semiconductor
| Fri 12 Jun 2026
Beijing, June 12 -- The 10th Research Institute of China Electronics Technology Group has sought patent for Preparation Method of Heterojunction Bipolar Transistor Device. This invention was developed by Yu Hui, Yu Songlin, Liu Ming, Xing Weirong, Zhang Yi, Huo Xiaopei, Wen Tao, Zhou Lei, Wang Xiaoqian, Wang Jing, Ni Yupeng and ..